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RQ3L050GNTB

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RQ3L050GNTB

Category : Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs

FET Feature : -

Vgs(th) (Max) @ Id : 2.5V @ 25µA

Operating Temperature : 150°C (TJ)

Package / Case : 8-PowerVDFN

Gate Charge (Qg) (Max) @ Vgs : 2.8 nC @ 4.5 V

Rds On (Max) @ Id, Vgs : 61mOhm @ 5A, 10V

FET Type : N-Channel

Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V

Package : Tape & Reel (TR) Cut Tape (CT) Digi-Reel®

Drain to Source Voltage (Vdss) : 60 V

Vgs (Max) : ±20V

Product Status : Active

Input Capacitance (Ciss) (Max) @ Vds : 300 pF @ 30 V

Mounting Type : Surface Mount

Series : -

Supplier Device Package : 8-HSMT (3.2x3)

Mfr : Rohm Semiconductor

Current - Continuous Drain (Id) @ 25°C : 12A (Tc)

Power Dissipation (Max) : 14.8W (Tc)

Technology : MOSFET (Metal Oxide)

Base Product Number : RQ3L050

Description : MOSFET N-CHANNEL 60V 12A 8HSMT

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N-Channel 60 V 12A (Tc) 14.8W (Tc) Surface Mount 8-HSMT (3.2x3)

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