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TP65H070LDG-TR

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TP65H070LDG-TR

Category : Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs

Gate Charge (Qg) (Max) @ Vgs : 9.3 nC @ 10 V

Product Status : Active

Mounting Type : Surface Mount

Package : Tape & Reel (TR) Cut Tape (CT) Digi-Reel®

Input Capacitance (Ciss) (Max) @ Vds : 600 pF @ 400 V

Series : TP65H070L

Vgs (Max) : ±20V

Vgs(th) (Max) @ Id : 4.8V @ 700µA

Supplier Device Package : 3-PQFN (8x8)

Rds On (Max) @ Id, Vgs : 85mOhm @ 16A, 10V

Mfr : Transphorm

Operating Temperature : -55°C ~ 150°C (TJ)

FET Type : N-Channel

Drive Voltage (Max Rds On, Min Rds On) : 10V

Power Dissipation (Max) : 96W (Tc)

Package / Case : 3-PowerDFN

Drain to Source Voltage (Vdss) : 650 V

Current - Continuous Drain (Id) @ 25°C : 25A (Tc)

Technology : GaNFET (Gallium Nitride)

FET Feature : -

Description : 650 V 25 A GAN FET

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N-Channel 650 V 25A (Tc) 96W (Tc) Surface Mount 3-PQFN (8x8)

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