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BSC096N10LS5ATMA1

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BSC096N10LS5ATMA1

Category : Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs

FET Feature : -

Vgs(th) (Max) @ Id : 2.3V @ 36µA

Operating Temperature : -55°C ~ 175°C (TJ)

Package / Case : 8-PowerTDFN

Gate Charge (Qg) (Max) @ Vgs : 14.6 nC @ 4.5 V

Rds On (Max) @ Id, Vgs : 9.6mOhm @ 20A, 10V

FET Type : N-Channel

Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V

Package : Tape & Reel (TR) Cut Tape (CT) Digi-Reel®

Drain to Source Voltage (Vdss) : 100 V

Vgs (Max) : ±20V

Product Status : Active

Input Capacitance (Ciss) (Max) @ Vds : 2100 pF @ 50 V

Mounting Type : Surface Mount

Series : OptiMOS™ 5

Supplier Device Package : PG-TDSON-8-6

Mfr : Infineon Technologies

Current - Continuous Drain (Id) @ 25°C : 40A (Tc)

Power Dissipation (Max) : 3W (Ta), 83W (Tc)

Technology : MOSFET (Metal Oxide)

Base Product Number : BSC096

Description : MOSFET N-CH 100V 40A TDSON-8-6

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N-Channel 100 V 40A (Tc) 3W (Ta), 83W (Tc) Surface Mount PG-TDSON-8-6

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