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IPD80R600P7ATMA1

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IPD80R600P7ATMA1

Category : Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs

FET Feature : -

Vgs(th) (Max) @ Id : 3.5V @ 170µA

Operating Temperature : -55°C ~ 150°C (TJ)

Package / Case : TO-252-3, DPak (2 Leads + Tab), SC-63

Gate Charge (Qg) (Max) @ Vgs : 20 nC @ 10 V

Rds On (Max) @ Id, Vgs : 600mOhm @ 3.4A, 10V

FET Type : N-Channel

Drive Voltage (Max Rds On, Min Rds On) : 10V

Package : Tape & Reel (TR) Cut Tape (CT) Digi-Reel®

Drain to Source Voltage (Vdss) : 800 V

Vgs (Max) : ±20V

Product Status : Active

Input Capacitance (Ciss) (Max) @ Vds : 570 pF @ 500 V

Mounting Type : Surface Mount

Series : CoolMOS™ P7

Supplier Device Package : PG-TO252-3

Mfr : Infineon Technologies

Current - Continuous Drain (Id) @ 25°C : 8A (Tc)

Power Dissipation (Max) : 60W (Tc)

Technology : MOSFET (Metal Oxide)

Base Product Number : IPD80R600

Description : MOSFET N-CH 800V 8A TO252-3

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N-Channel 800 V 8A (Tc) 60W (Tc) Surface Mount PG-TO252-3

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