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Category : Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs : 15.1 nC @ 10 V
Product Status : Active
Mounting Type : Surface Mount
Package : Tape & Reel (TR) Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds : 660 pF @ 10 V
Series : Automotive, AEC-Q101, U-MOSVI
Vgs (Max) : +10V, -20V
Vgs(th) (Max) @ Id : 2V @ 1mA
Supplier Device Package : SOT-23F
Rds On (Max) @ Id, Vgs : 134mOhm @ 1A, 10V
Mfr : Toshiba Semiconductor and Storage
Operating Temperature : 150°C
FET Type : P-Channel
Drive Voltage (Max Rds On, Min Rds On) : 4V, 10V
Power Dissipation (Max) : 1W (Ta)
Package / Case : SOT-23-3 Flat Leads
Drain to Source Voltage (Vdss) : 60 V
Current - Continuous Drain (Id) @ 25°C : 3.5A (Ta)
Technology : MOSFET (Metal Oxide)
FET Feature : -
Description : AECQ MOSFET PCH -60V -3.5A SOT23
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