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BSZ010NE2LS5ATMA1

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BSZ010NE2LS5ATMA1

Category : Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs

FET Feature : -

Vgs(th) (Max) @ Id : 2V @ 250µA

Operating Temperature : -55°C ~ 150°C (TJ)

Package / Case : 8-PowerTDFN

Gate Charge (Qg) (Max) @ Vgs : 29 nC @ 4.5 V

Rds On (Max) @ Id, Vgs : 1mOhm @ 20A, 10V

FET Type : N-Channel

Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V

Package : Tape & Reel (TR) Cut Tape (CT) Digi-Reel®

Drain to Source Voltage (Vdss) : 25 V

Vgs (Max) : ±16V

Product Status : Active

Input Capacitance (Ciss) (Max) @ Vds : 3900 pF @ 12 V

Mounting Type : Surface Mount

Series : OptiMOS™ 5

Supplier Device Package : PG-TSDSON-8-FL

Mfr : Infineon Technologies

Current - Continuous Drain (Id) @ 25°C : 32A (Ta), 40A (Tc)

Power Dissipation (Max) : 2.1W (Ta), 69W (Tc)

Technology : MOSFET (Metal Oxide)

Base Product Number : BSZ010

Description : MOSFET N-CH 25V 32A/40A TSDSON

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N-Channel 25 V 32A (Ta), 40A (Tc) 2.1W (Ta), 69W (Tc) Surface Mount PG-TSDSON-8-FL

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