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IPP200N25N3GXKSA1

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IPP200N25N3GXKSA1

Category : Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs

FET Feature : -

Vgs(th) (Max) @ Id : 4V @ 270µA

Operating Temperature : -55°C ~ 175°C (TJ)

Package / Case : TO-220-3

Gate Charge (Qg) (Max) @ Vgs : 86 nC @ 10 V

Rds On (Max) @ Id, Vgs : 20mOhm @ 64A, 10V

FET Type : N-Channel

Drive Voltage (Max Rds On, Min Rds On) : 10V

Package : Tube

Drain to Source Voltage (Vdss) : 250 V

Vgs (Max) : ±20V

Product Status : Active

Input Capacitance (Ciss) (Max) @ Vds : 7100 pF @ 100 V

Mounting Type : Through Hole

Series : OptiMOS™

Supplier Device Package : PG-TO220-3

Mfr : Infineon Technologies

Current - Continuous Drain (Id) @ 25°C : 64A (Tc)

Power Dissipation (Max) : 300W (Tc)

Technology : MOSFET (Metal Oxide)

Base Product Number : IPP200

Description : MOSFET N-CH 250V 64A TO220-3

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N-Channel 250 V 64A (Tc) 300W (Tc) Through Hole PG-TO220-3

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