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Category : Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature : -
Vgs(th) (Max) @ Id : 2.7V @ 2mA
Operating Temperature : -55°C ~ 175°C (TJ)
Package / Case : TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Gate Charge (Qg) (Max) @ Vgs : 18 nC @ 15 V
Rds On (Max) @ Id, Vgs : 585mOhm @ 4A, 15V
FET Type : N-Channel
Drive Voltage (Max Rds On, Min Rds On) : 15V
Package : Tube
Drain to Source Voltage (Vdss) : 1700 V
Vgs (Max) : ±15V
Product Status : Active
Input Capacitance (Ciss) (Max) @ Vds : 454 pF @ 1000 V
Mounting Type : Surface Mount
Series : G3R™
Supplier Device Package : TO-263-7
Mfr : GeneSiC Semiconductor
Current - Continuous Drain (Id) @ 25°C : 9A (Tc)
Power Dissipation (Max) : 91W (Tc)
Technology : SiCFET (Silicon Carbide)
Base Product Number : G3R450
Description : SIC MOSFET N-CH 9A TO263-7
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G3R450MT17J Images |
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