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IJW120R100T1

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IJW120R100T1

Transistor Polarity : N-Channel

Vgs - Gate-Source Breakdown Voltage : 2 V

Product Category : JFET

Mounting Style : Through Hole

Drain-Source Current at Vgs=0 : 26 A

Pd - Power Dissipation : 190 W

Package / Case : TO-247-3

Maximum Operating Temperature : + 175 C

Vds - Drain-Source Breakdown Voltage : 1200 V

Packaging : Tube

Id - Continuous Drain Current : 78 A

Series : XJY120R100

Rds On - Drain-Source Resistance : 100 mOhms

Manufacturer : Infineon Technologies

Description : JFET SIC CHIP/DISCRETE

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The IJW120R100T1,from Infineon Technologies,is JFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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