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Beijing Silk Road Enterprise Management Services Co.,LTD
Beijing Silk Road Enterprise Management Services Co.,LTD
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BSO612CVGHUMA1

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BSO612CVGHUMA1

Supplier Device Package : PG-DSO-8

Product Category : MOSFET

Minimum Quantity : 2500

Input Capacitance (Ciss) (Max) @ Vds : 340pF @ 25V

Package / Case : 8-SOIC (0.154", 3.90mm Width)

Part Status : Active

Current - Continuous Drain (Id) @ 25°C : 3A, 2A

Packaging : Tape & Reel (TR)

Operating Temperature : -55°C ~ 150°C (TJ)

FET Type : N and P-Channel

FET Feature : Standard

Drain to Source Voltage (Vdss) : 60V

Mounting Type : Surface Mount

Gate Charge (Qg) (Max) @ Vgs : 15.5nC @ 10V

Rds On (Max) @ Id, Vgs : 120 mOhm @ 3A, 10V

Power - Max : 2W

Vgs(th) (Max) @ Id : 4V @ 20µA

Series : SIPMOS®

Manufacturer : Infineon Technologies

Description : MOSFET N/P-CH 60V 2A 8-SOIC

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The BSO612CVGHUMA1,from Infineon Technologies,is MOSFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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