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DMN1019USN-7

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DMN1019USN-7

Product Category : MOSFET

Vgs (Max) : ±8V

Current - Continuous Drain (Id) @ 25°C : 9.3A (Ta)

FET Type : N-Channel

Mounting Type : Surface Mount

Gate Charge (Qg) (Max) @ Vgs : 50.6nC @ 8V

Manufacturer : Diodes Incorporated

Minimum Quantity : 3000

Drive Voltage (Max Rds On, Min Rds On) : 1.2V, 2.5V

Factory Stock : 120000

Operating Temperature : -55°C ~ 150°C (TJ)

FET Feature : -

Series : -

Input Capacitance (Ciss) (Max) @ Vds : 2426pF @ 10V

Supplier Device Package : SC-59

Part Status : Active

Packaging : Tape & Reel (TR)

Rds On (Max) @ Id, Vgs : 10 mOhm @ 9.7A, 4.5V

Power Dissipation (Max) : 680mW (Ta)

Package / Case : TO-236-3, SC-59, SOT-23-3

Technology : MOSFET (Metal Oxide)

Vgs(th) (Max) @ Id : 800mV @ 250µA

Drain to Source Voltage (Vdss) : 12V

Description : MOSFET N-CH 12V 9.3A SC59

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The DMN1019USN-7,from Diodes Incorporated,is MOSFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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