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105N04N

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105N04N

Product Category : MOSFET

Vgs (Max) : ±20V

Current - Continuous Drain (Id) @ 25°C : 11A (Ta), 40A (Tc)

FET Type : N-Channel

Mounting Type : Surface Mount

Gate Charge (Qg) (Max) @ Vgs : 17nC @ 10V

Manufacturer : Infineon Technologies

Minimum Quantity : 5000

Drive Voltage (Max Rds On, Min Rds On) : 10V

Operating Temperature : -55°C ~ 150°C (TJ)

FET Feature : -

Series : OptiMOS™

Input Capacitance (Ciss) (Max) @ Vds : 1300pF @ 20V

Supplier Device Package : PG-TSDSON-8

Part Status : Active

Packaging : Tape & Reel (TR)

Rds On (Max) @ Id, Vgs : 10.5 mOhm @ 20A, 10V

Power Dissipation (Max) : 2.1W (Ta), 35W (Tc)

Package / Case : 8-PowerTDFN

Technology : MOSFET (Metal Oxide)

Vgs(th) (Max) @ Id : 4V @ 14µA

Drain to Source Voltage (Vdss) : 40V

Description : MOSFET N-CH 40V 40A TSDSON-8

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