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Product Category : MOSFET
Vgs (Max) : ±20V
Current - Continuous Drain (Id) @ 25°C : 260mA (Ta)
FET Type : P-Channel
Mounting Type : Surface Mount
Gate Charge (Qg) (Max) @ Vgs : 5.4nC @ 10V
Manufacturer : Infineon Technologies
Minimum Quantity : 1000
Drive Voltage (Max Rds On, Min Rds On) : 2.8V, 10V
Operating Temperature : -55°C ~ 150°C (TJ)
FET Feature : -
Series : SIPMOS®
Input Capacitance (Ciss) (Max) @ Vds : 104pF @ 25V
Supplier Device Package : PG-SOT223-4
Part Status : Active
Packaging : Tape & Reel (TR)
Rds On (Max) @ Id, Vgs : 12 Ohm @ 260mA, 10V
Power Dissipation (Max) : 1.8W (Ta)
Package / Case : TO-261-4, TO-261AA
Technology : MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id : 2V @ 130µA
Drain to Source Voltage (Vdss) : 250V
Description : MOSFET P-CH 250V 260MA 4SOT223
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