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Product Category : MOSFET
Vgs (Max) : ±16V
Current - Continuous Drain (Id) @ 25°C : 116A (Tc)
FET Type : N-Channel
Mounting Type : Through Hole
Gate Charge (Qg) (Max) @ Vgs : 60nC @ 4.5V
Manufacturer : Infineon Technologies
Minimum Quantity : 1
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Operating Temperature : -55°C ~ 175°C (TJ)
FET Feature : -
Series : HEXFET®
Input Capacitance (Ciss) (Max) @ Vds : 3290pF @ 25V
Supplier Device Package : TO-220AB
Part Status : Active
Packaging : Tube
Rds On (Max) @ Id, Vgs : 7 mOhm @ 60A, 10V
Power Dissipation (Max) : 180W (Tc)
Package / Case : TO-220-3
Technology : MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id : 1V @ 250µA
Drain to Source Voltage (Vdss) : 30V
Description : MOSFET N-CH 30V 116A TO-220AB
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