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Beijing Silk Road Enterprise Management Services Co.,LTD
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IRF9Z24NSTRLPBF

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IRF9Z24NSTRLPBF

Product Category : MOSFET

Vgs (Max) : ±20V

Current - Continuous Drain (Id) @ 25°C : 12A (Tc)

FET Type : P-Channel

Mounting Type : Surface Mount

Gate Charge (Qg) (Max) @ Vgs : 19nC @ 10V

Manufacturer : Infineon Technologies

Minimum Quantity : 800

Drive Voltage (Max Rds On, Min Rds On) : 10V

Operating Temperature : -55°C ~ 175°C (TJ)

FET Feature : -

Series : HEXFET®

Input Capacitance (Ciss) (Max) @ Vds : 350pF @ 25V

Supplier Device Package : D2PAK

Part Status : Active

Packaging : Tape & Reel (TR)

Rds On (Max) @ Id, Vgs : 175 mOhm @ 7.2A, 10V

Power Dissipation (Max) : 3.8W (Ta), 45W (Tc)

Package / Case : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Technology : MOSFET (Metal Oxide)

Vgs(th) (Max) @ Id : 4V @ 250µA

Drain to Source Voltage (Vdss) : 55V

Description : MOSFET P-CH 55V 12A D2PAK

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The IRF9Z24NSTRLPBF,from Infineon Technologies,is MOSFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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