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Product Category : MOSFET
Vgs (Max) : ±20V
Current - Continuous Drain (Id) @ 25°C : 22A (Ta), 90A (Tc)
FET Type : N-Channel
Mounting Type : Surface Mount
Gate Charge (Qg) (Max) @ Vgs : 96.3nC @ 10V
Manufacturer : Diodes Incorporated
Minimum Quantity : 2500
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Operating Temperature : -55°C ~ 150°C (TJ)
FET Feature : -
Series : -
Input Capacitance (Ciss) (Max) @ Vds : 4515pF @ 30V
Supplier Device Package : POWERDI5060-8
Part Status : Active
Packaging : Tape & Reel (TR)
Rds On (Max) @ Id, Vgs : 2.8 mOhm @ 25A, 10V
Power Dissipation (Max) : 2.1W (Ta), 105W (Tc)
Package / Case : 8-PowerTDFN
Technology : MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id : 3V @ 250µA
Drain to Source Voltage (Vdss) : 60V
Description : MOSFET N-CH 60V 22A
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