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Product Category : MOSFET
Vgs (Max) : ±20V
Current - Continuous Drain (Id) @ 25°C : 10.3A (Ta), 60A (Tc)
FET Type : N-Channel
Mounting Type : Surface Mount
Gate Charge (Qg) (Max) @ Vgs : 47nC @ 10V
Manufacturer : Infineon Technologies
Minimum Quantity : 4800
Drive Voltage (Max Rds On, Min Rds On) : 10V
Operating Temperature : -40°C ~ 150°C (TJ)
FET Feature : -
Series : HEXFET®
Input Capacitance (Ciss) (Max) @ Vds : 2210pF @ 25V
Supplier Device Package : DIRECTFET™ MN
Part Status : Active
Packaging : Tape & Reel (TR)
Rds On (Max) @ Id, Vgs : 13 mOhm @ 10.3A, 10V
Power Dissipation (Max) : 2.8W (Ta), 89W (Tc)
Package / Case : DirectFET™ Isometric MN
Technology : MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id : 4.8V @ 150µA
Drain to Source Voltage (Vdss) : 100V
Description : MOSFET N-CH 100V 10.3A DIRECTFET
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