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ZXMN10A08GTA

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ZXMN10A08GTA

Product Category : MOSFET

Vgs (Max) : ±20V

Current - Continuous Drain (Id) @ 25°C : 2A (Ta)

FET Type : N-Channel

Mounting Type : Surface Mount

Gate Charge (Qg) (Max) @ Vgs : 7.7nC @ 10V

Manufacturer : Diodes Incorporated

Minimum Quantity : 1000

Drive Voltage (Max Rds On, Min Rds On) : 6V, 10V

Operating Temperature : -55°C ~ 150°C (TJ)

FET Feature : -

Series : -

Input Capacitance (Ciss) (Max) @ Vds : 405pF @ 50V

Supplier Device Package : SOT-223

Part Status : Active

Packaging : Tape & Reel (TR)

Rds On (Max) @ Id, Vgs : 250 mOhm @ 3.2A, 10V

Power Dissipation (Max) : 2W (Ta)

Package / Case : TO-261-4, TO-261AA

Technology : MOSFET (Metal Oxide)

Vgs(th) (Max) @ Id : 2V @ 250µA

Drain to Source Voltage (Vdss) : 100V

Description : MOSFET N-CH 100V 2A SOT223

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The ZXMN10A08GTA,from Diodes Incorporated,is MOSFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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