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IPD50R500CEBTMA1

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IPD50R500CEBTMA1

Product Category : MOSFET

Vgs (Max) : ±20V

Current - Continuous Drain (Id) @ 25°C : 7.6A (Tc)

FET Type : N-Channel

Mounting Type : Surface Mount

Gate Charge (Qg) (Max) @ Vgs : 18.7nC @ 10V

Manufacturer : Infineon Technologies

Drive Voltage (Max Rds On, Min Rds On) : 13V

Operating Temperature : -55°C ~ 150°C (TJ)

FET Feature : Super Junction

Series : CoolMOS™

Input Capacitance (Ciss) (Max) @ Vds : 433pF @ 100V

Supplier Device Package : PG-TO252-3

Packaging : Tape & Reel (TR)

Rds On (Max) @ Id, Vgs : 500 mOhm @ 2.3A, 13V

Power Dissipation (Max) : 57W (Tc)

Package / Case : TO-252-3, DPak (2 Leads + Tab), SC-63

Technology : MOSFET (Metal Oxide)

Vgs(th) (Max) @ Id : 3.5V @ 200µA

Drain to Source Voltage (Vdss) : 500V

Description : MOSFET N-CH 500V 7.6A PG-TO252

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The IPD50R500CEBTMA1,from Infineon Technologies,is MOSFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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