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IRF5210LPBF

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IRF5210LPBF

Product Category : MOSFET

Vgs (Max) : ±20V

Current - Continuous Drain (Id) @ 25°C : 38A (Tc)

FET Type : P-Channel

Mounting Type : Through Hole

Gate Charge (Qg) (Max) @ Vgs : 230nC @ 10V

Manufacturer : Infineon Technologies

Minimum Quantity : 1

Drive Voltage (Max Rds On, Min Rds On) : 10V

Operating Temperature : -55°C ~ 150°C (TJ)

FET Feature : -

Series : HEXFET®

Input Capacitance (Ciss) (Max) @ Vds : 2780pF @ 25V

Supplier Device Package : TO-262

Part Status : Active

Packaging : Tube

Rds On (Max) @ Id, Vgs : 60 mOhm @ 38A, 10V

Power Dissipation (Max) : 3.1W (Ta), 170W (Tc)

Package / Case : TO-262-3 Long Leads, I²Pak, TO-262AA

Technology : MOSFET (Metal Oxide)

Vgs(th) (Max) @ Id : 4V @ 250µA

Drain to Source Voltage (Vdss) : 100V

Description : MOSFET P-CH 100V 38A TO-262

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The IRF5210LPBF,from Infineon Technologies,is MOSFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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