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IPB048N15N5ATMA1

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IPB048N15N5ATMA1

Product Category : MOSFET

Vgs (Max) : ±20V

Current - Continuous Drain (Id) @ 25°C : 120A (Tc)

FET Type : N-Channel

Mounting Type : Surface Mount

Gate Charge (Qg) (Max) @ Vgs : 100nC @ 10V

Manufacturer : Infineon Technologies

Minimum Quantity : 1000

Drive Voltage (Max Rds On, Min Rds On) : 8V, 10V

Operating Temperature : -55°C ~ 175°C (TJ)

FET Feature : -

Series : OptiMOS™

Input Capacitance (Ciss) (Max) @ Vds : 7800pF @ 75V

Supplier Device Package : PG-TO263-3

Part Status : Active

Packaging : Tape & Reel (TR)

Rds On (Max) @ Id, Vgs : 4.8 mOhm @ 60A, 10V

Power Dissipation (Max) : 300W (Tc)

Package / Case : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Technology : MOSFET (Metal Oxide)

Vgs(th) (Max) @ Id : 4.6V @ 264µA

Drain to Source Voltage (Vdss) : 150V

Description : MOSFET N-CH 150V 120A TO263-3

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The IPB048N15N5ATMA1,from Infineon Technologies,is MOSFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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