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SQJQ900E-T1_GE3

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SQJQ900E-T1_GE3

Transistor Polarity : N-Channel

Technology : Si

Id - Continuous Drain Current : 100 A, 100 A

Mounting Style : SMD/SMT

Minimum Operating Temperature : - 55 C

Package / Case : PowerPAK-8x8L-4

Maximum Operating Temperature : + 175 C

Channel Mode : Enhancement

Vds - Drain-Source Breakdown Voltage : 40 V, 40 V

Packaging : Reel

Vgs th - Gate-Source Threshold Voltage : 1.5 V, 1.5 V

Product Category : MOSFET

Rds On - Drain-Source Resistance : 3.4 mOhms, 3.4 mOhms

Number of Channels : 2 Channel

Vgs - Gate-Source Voltage : +/- 20 V, +/- 20 V

Qg - Gate Charge : 120 nC, 120 nC

Manufacturer : Siliconix / Vishay

Description : MOSFET N Ch 40Vds 20Vgs AEC-Q101 Qualified

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The SQJQ900E-T1_GE3,from Siliconix / Vishay,is MOSFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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