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IPG20N06S2L35ATMA1

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IPG20N06S2L35ATMA1

Supplier Device Package : PG-TDSON-8-4

Product Category : MOSFET

Minimum Quantity : 5000

Input Capacitance (Ciss) (Max) @ Vds : 790pF @ 25V

Package / Case : 8-PowerVDFN

Part Status : Active

Current - Continuous Drain (Id) @ 25°C : 20A

Packaging : Tape & Reel (TR)

Operating Temperature : -55°C ~ 175°C (TJ)

FET Type : 2 N-Channel (Dual)

FET Feature : Logic Level Gate

Drain to Source Voltage (Vdss) : 55V

Mounting Type : Surface Mount

Gate Charge (Qg) (Max) @ Vgs : 23nC @ 10V

Rds On (Max) @ Id, Vgs : 35 mOhm @ 15A, 10V

Power - Max : 65W

Vgs(th) (Max) @ Id : 2V @ 27µA

Series : Automotive, AEC-Q101, OptiMOS™

Manufacturer : Infineon Technologies

Description : MOSFET 2N-CH 55V 20A TDSON-8-4

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The IPG20N06S2L35ATMA1,from Infineon Technologies,is MOSFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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