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FF11MR12W1M1B11BOMA1

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FF11MR12W1M1B11BOMA1

Supplier Device Package : Module

Product Category : MOSFET

Minimum Quantity : 1

Input Capacitance (Ciss) (Max) @ Vds : 7950pF @ 800V

Package / Case : Module

Part Status : Active

Current - Continuous Drain (Id) @ 25°C : 100A

Packaging : Tray

Operating Temperature : -40°C ~ 150°C (TJ)

FET Type : 2 N-Channel (Dual)

FET Feature : Silicon Carbide (SiC)

Drain to Source Voltage (Vdss) : 1200V (1.2kV)

Mounting Type : Chassis Mount

Gate Charge (Qg) (Max) @ Vgs : 250nC @ 15V

Rds On (Max) @ Id, Vgs : 11 mOhm @ 100A, 15V

Power - Max : 20mW

Vgs(th) (Max) @ Id : 5.55V @ 40mA

Series : CoolSiC™

Manufacturer : Infineon Technologies

Description : MOSFET 2 N-CH 1200V 100A MODULE

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The FF11MR12W1M1B11BOMA1,from Infineon Technologies,is MOSFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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