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Product Category : MOSFET
Vgs (Max) : ±20V
Current - Continuous Drain (Id) @ 25°C : 70A (Tc)
FET Type : N-Channel
Mounting Type : Through Hole
Gate Charge (Qg) (Max) @ Vgs : 240nC @ 10V
Manufacturer : Infineon Technologies
Minimum Quantity : 500
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Operating Temperature : -55°C ~ 175°C (TJ)
FET Feature : -
Series : SIPMOS®
Input Capacitance (Ciss) (Max) @ Vds : 4540pF @ 25V
Supplier Device Package : PG-TO220-3-1
Part Status : Not For New Designs
Packaging : Tube
Rds On (Max) @ Id, Vgs : 16 mOhm @ 50A, 10V
Power Dissipation (Max) : 250W (Tc)
Package / Case : TO-220-3
Technology : MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id : 2V @ 2mA
Drain to Source Voltage (Vdss) : 100V
Description : MOSFET N-CH 100V 70A TO220-3
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