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IRF1010EZL

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IRF1010EZL

Product Category : MOSFET

Vgs (Max) : ±20V

Current - Continuous Drain (Id) @ 25°C : 75A (Tc)

FET Type : N-Channel

Mounting Type : Through Hole

Gate Charge (Qg) (Max) @ Vgs : 86nC @ 10V

Manufacturer : Infineon Technologies

Minimum Quantity : 50

Drive Voltage (Max Rds On, Min Rds On) : 10V

Operating Temperature : -55°C ~ 175°C (TJ)

FET Feature : -

Series : HEXFET®

Input Capacitance (Ciss) (Max) @ Vds : 2810pF @ 25V

Supplier Device Package : TO-262

Part Status : Obsolete

Packaging : Tube

Rds On (Max) @ Id, Vgs : 8.5 mOhm @ 51A, 10V

Power Dissipation (Max) : 140W (Tc)

Package / Case : TO-262-3 Long Leads, I²Pak, TO-262AA

Technology : MOSFET (Metal Oxide)

Vgs(th) (Max) @ Id : 4V @ 100µA

Drain to Source Voltage (Vdss) : 60V

Description : MOSFET N-CH 60V 75A TO-262

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The IRF1010EZL,from Infineon Technologies,is MOSFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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