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APT75GN60LDQ3G

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APT75GN60LDQ3G

Gate-Emitter Leakage Current : 600 nA

Product Category : IGBT Transistors

Mounting Style : Through Hole

Continuous Collector Current at 25 C : 155 A

Pd - Power Dissipation : 536 W

Collector- Emitter Voltage VCEO Max : 600 V

Package / Case : TO-264-3

Maximum Operating Temperature : + 175 C

Maximum Gate Emitter Voltage : 30 V

Configuration : Single

Collector-Emitter Saturation Voltage : 1.45 V

Manufacturer : Microsemi

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The APT75GN60LDQ3G,from Microsemi,is IGBT Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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